Published June 1999 | Version v1
Journal article Metadata-only

Semiconductor - metal transitions in melts

Creators

  • 1. Sankt-Peterburgskij Gosudarstvennyj Univ., Sankt-Peterburg (Russian Federation)
  • 2. RAN, Inst. Problem Mashinovedeniya, Sankt-Peterburg (Russian Federation)

Description

The semiconductor - metal transition in the Ge - Te system melts is described as a washed-out phase transition of the first order. Pronounced change of the melts properties is identified by increase in Ge content from 3 up to 5 at. %

Abstract (Russian)

Переход полупроводник - металл в расплавах системы Ge - Te описан как размытый фазовый переход первого рода. Обнаружено резкое изменение свойств расплавов при увеличении содержания Ge от 3 до 5 ат. %

Additional details

Additional titles

Original title (Russian)
Фазовый переход полупроводник - металл в расплавах

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
35
Journal Issue
6
Journal Page Range
p. 685-688
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
31034959
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BINARY ALLOY SYSTEMS; CONCENTRATION RATIO; DENSITY; GERMANIUM ALLOYS; LIQUID METALS; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE
Descriptors DEC
ALLOY SYSTEMS; ALLOYS; ELEMENTS; FLUIDS; LIQUIDS; MATERIALS; METALS; PHYSICAL PROPERTIES

Optional Information

Notes
10 refs., 4 figs.