Investigation of gas sensing properties of InN nanoparticles

InN nanoparticles were grown by chemical vapor deposition technique using In₂O₃ as precursor material. Raman spectroscopic studies show the presence of the wurtzite phase of as-grown InN. Size of the nanoparticles were in range from quantum dot (<8 nm) to larger sized particles (100 nm). We studied the gas sensing properties of InN nanoparticles with CH₄ gas. Sensors substrates were fabricated with interdigitated Au electrodes. InN nanoparticles show high response towards CH₄ with minimum detectable concentration of 50 ppm at 200 °C