Published July 2008 | Version v1
Journal article

Effective field theories for electrons in crystalline structures

  • 1. Physics Department, Comisión Nacional de Energía Atómica, Avenida Libertador 8250, (1429) Buenos Aires (Argentina)

Description

We present an effective field theory formulation for a class of condensed matter systems with crystalline structures for which some of the discrete symmetries of the underlying crystal survive the long distance limit, up to mesoscopic scales, and argue that this class includes interesting materials, such as Si-doped GaAs. The surviving symmetries determine a limited set of possible effective interactions that we analyze in detail for the case of Si-doped GaAs materials. These coincide with the ones proposed in the literature to describe the spin relaxation times for the Si-doped GaAs materials, obtained here as a consequence of the choice of effective fields and their symmetries. The resulting low-energy effective theory is described in terms of three (six chiral) one-dimensional Luttinger liquid systems and their corresponding intervalley transitions. We also discuss the Mott transition within the context of the effective theory

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-5468/2008/07/P07001

Additional details

Identifiers

DOI
10.1088/1742-5468/2008/07/P07001;
PII
S1742-5468(08)82375-8;

Publishing Information

Journal Title
Journal of Statistical Mechanics
Journal Volume
2008
Journal Issue
07
Journal Page Range
[22 p.]
ISSN
1742-5468