Published May 1988
| Version v1
Journal article
Influence of neutron irradiation and annealing on the properties of germanium-doped silicon
Creators
- 1. Institute of Problems of Technology of Microelectronics and Ultrapure Materials, Chernogolovka (USSR)
Description
An investigation was made of the influence of irradiation with large neutron doses and of isochronous annealing (200-750 degree C) on the optical and structural properties of Si doped with Ge. The presence of Ge in Si (particularly in high concentrations) slowed down generation of divacancies and altered the nature of their annealing, slowed down the annealing of the defects responsible for the edge absorption and deformation peak of irradiated Si, and also slowed down generation of superclusters formed as a result of irradiation and annealing
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors (English Translation)
- Journal Volume
- 22
- Journal Issue
- 5
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 526-529
- ISSN
- 0038-5700
- CODEN
- SPSEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21074578
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ANNEALING; DATA PROCESSING; DOPED MATERIALS; GERMANIUM; MEASURING INSTRUMENTS; MEASURING METHODS; MECHANICAL PROPERTIES; NEUTRONS; OPTICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; USSR
- Descriptors DEC
- BARYONS; DEVELOPED COUNTRIES; ELEMENTARY PARTICLES; ELEMENTS; EUROPE; FERMIONS; HADRONS; HEAT TREATMENTS; MATERIALS; METALS; NUCLEONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).