Published May 31, 1979 | Version v1
Patent Open

Chemical etching technique for monocrystals based on beryllium oxide

Description

A chemical etching technique for chrysoberyl monocrystals (BeAl2O4) to reveal and identify different defects of crystal structure is proposed. The technique consists in chemical polishing of samples in a sodium metaphosphate melt at 900-1000 deg C during 30-40 min and selective etching in a caustic potassium melt at 360-400 deg C during 5-20 min. Using light microscopy the structural defect density is estimated through etched pits

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Additional titles

Original title (Russian)
Способ химического травления монокристаллов на основе окиси бериллия

Publishing Information

Imprint Pagination
5 p.
IPC:
Int. Cl. C 30B 33/00; C 30B 29/22.
IPC
Int. Cl. C 30B 33/00; C 30B 29/22.
Patent number
SU patent document 1006552/A/

Optional Information

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