Time-resolved detection of many-particle hole states in InAs/GaAs quantum dots using a two-dimensional hole gas up to 77 K
- 1. Institut fuer Festkoerperphysik, Technische Universitaet Berlin (Germany)
- 2. Faculty of Physics and CeNIDE, University of Duisburg-Essen, Duisburg (Germany)
Description
We demonstrate the detection of many-particle hole states in self-organized InAs/GaAs quantum dots (QDs) using an adjacent two-dimensional hole gas (2DHG) as detector for temperatures up to 77 K. capacitance-voltage (C-V) measurements as well as time-resolved current measurements in the 2DHG resolve a structure of six distinct peaks which are related to the many-particle hole states in the QD ensemble. The time constants of the capture and emission processes for each individual many-particle hole state are extracted and the underlying emission processes are identified. An equivalent circuit model yields the gate voltage dependent lever-arm and the level-splittings of the many-particle hole states. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.201100218Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
- Journal Volume
- 9
- Journal Issue
- 2
- Journal Page Range
- p. 243-246
- ISSN
- 1610-1642
Conference
- Title
- 38. international symposium on compound semiconductors
- Acronym
- ISCS 2011
- Dates
- 22-24 May 2011
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 43024404
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ENERGY-LEVEL DENSITY; EQUIVALENT CIRCUITS; FERMI GAS; GALLIUM ARSENIDES; HOLES; QUANTUM DOTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TIME RESOLUTION; TUNNEL EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; GALLIUM COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; RESOLUTION; TEMPERATURE RANGE; TIMING PROPERTIES
Optional Information
- Notes
- With 7 figs., 1 tab., 17 refs.