Shadowing and mask opening effects during selective-area vapor–liquid–solid growth of InP nanowires by metalorganic molecular beam epitaxy

Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor–liquid–solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor–liquid–solid nanowire epitaxy. (paper)