Published 1986
| Version v1
Book
Two-layer tungsten interconnect
Creators
- 1. Hewlett Packard, Fort Collins IC Div., 3404 East Harmony Road, Fort Collins, CO 80525
Description
Among the most advanced chips currently in production are those made with Hewlett-Packard's NMOS III technology in Fort Collins, Colorado. A chip set made with this process is the heart of the HP 9000 Computer. NMOS III is a modified n-channel silicon gate process featuring three and one-half levels of interconnect: diffusion, polysilicon with buried contacts and two levels of refractory metal. Minimum dimensions in the first metal layer consist of 1.5 micron lines and 1.0 micron spaces. Tungsten was chosen for the metal layers because of its conductivity and current carrying capability. The process for fabricating these layers is described. Particular emphasis has been placed on considerations given to plasma etching
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-931837-32-4
- Imprint Title
- Tungsten and other refractory metals for VLSI applications
- Journal Page Range
- p. 536-538.
Conference
- Title
- Workshop on tungsten for VLSI applications.
- Dates
- 12-13 Nov 1984.
- Place
- Albuquerque, NM (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18030966
- Subject category
- S36: MATERIALS SCIENCE; S42: ENGINEERING; S99: GENERAL AND MISCELLANEOUS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CONNECTORS; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ETCHING; FABRICATION; GATING CIRCUITS; HP COMPUTERS; INTEGRATED CIRCUITS; LAYERS; MATERIALS; METALS; MOS TRANSISTORS; PLASMA ARC SPRAYING; POLYCRYSTALS; REFRACTORIES; SILICON; TUNGSTEN
- Descriptors DEC
- COMPUTERS; CONDUCTOR DEVICES; CRYSTALS; CURRENTS; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; SPRAY COATING; SURFACE COATING; TRANSISTORS; TRANSITION ELEMENTS