Published 1988
| Version v1
Miscellaneous
Line width of inra impurity absorption in weakly doped semiconductors
- 1. USSR
- 2. Instituto de Pesquisas Espaciais, Sao Jose dos Campos (Brazil)
Description
Published in summary form only
Availability note (English)
Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- Largura de linha de absorcao intra-impureza em semicondutores fracamente dopados
Publishing Information
- Imprint Title
- Proceedings of the 11. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 299 p.
- Journal Page Range
- p. 231.
Conference
- Title
- 11. National Meeting on Condensed Matter Physics.
- Dates
- 9-13 May 1988.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 19085707
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ABSORPTION; ELECTRIC FIELDS; IMPURITIES; LINE BROADENING; N-TYPE CONDUCTORS; NUMERICAL SOLUTION; STARK EFFECT
- Descriptors DEC
- MATERIALS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Imprint:Anais do 11. Encontro Nacional de Fisica da Materia Condensada.