Non-Contact Wafer Fabrication Process Using Gas Cluster Ion Beams

Gas cluster ion beam (GCIB) was used for precise wafer fabrication process. GCIB realizes a quite low-energy ion beam and shows very precise and good repeatability. To obtain thickness uniformity of Si over the whole wafer, small beam diameter (∼4 mm) of GCIB was used. Thickness variations on the wafer can be reduced by location specific irradiation of collimated GCIB. By controlling the scan speed of GCIB irradiation based on the removal thickness at each irradiation position, thickness and height uniformity of Si can be improved to several tens of nm. In addition, etching enhancement by using Ar/SF6 mixed cluster was studied.