Published September 2000
| Version v1
Journal article
Simulation of the ion-trapping instability using strong-strong model in an electron storage ring
Creators
- 1. China Science and Technology Univ., Hefei (China). National Synchrotron Radiation Laboratory
Description
The ions trapped by beam potential well can cause beam instability in electron storage rings. It is important to study the mechanism and suppress method of the instability to increase the perform level of machine. The simulation methods and results of ion-trapping instability using strong-strong model were introduced for the HLS ring. These results can be used to understand the phenomena observed in the HLS ring
Additional details
Publishing Information
- Journal Title
- High Power Laser and Particle Beams
- Journal Volume
- 12
- Journal Issue
- 5
- Journal Page Range
- p. 643-646
- ISSN
- 1001-4322
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 32009695
- Subject category
- S43: PARTICLE ACCELERATORS;
- Descriptors DEI
- ELECTRONS; INSTABILITY; IONS; SIMULATION; STORAGE RINGS; STRONG-COUPLING MODEL; TRAPPING
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MATHEMATICAL MODELS; PARTICLE MODELS