Published November 1, 1994 | Version v1
Journal article

Theory of electron-hole asymmetry in doped CuO2 planes

  • 1. Department of Physics, Queen's University, Kingston, Ontario, K7L 3N6 (Canada)
  • 2. Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong)

Description

Consistent with experiment, for the hole-doped materials short-ranged incommensurate spin orderings are induced, whereas for the electron-doped system only commensurate spin correlations are found. Further, we propose that there is an important difference between the spatial distributions of mobile carriers for these two systems: for the hole-doped material the quasiparticles tend to stay far apart from one another, whereas for the electron-doped material we find tendencies consistent with the clustering of carriers, and possibly of low-energy fluctuations into an electronic phase-separated state. Phase separation in this material is consistent with the midgap states found by recent angle-resolved photoemission spectroscopy studies. Last, we propose the extrapolation of an approach based on the t-t'-J model to the hole-doped 123 system

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
50
Journal Issue
17
Journal Page Range
p. 12866-12875.
ISSN
0163-1829
CODEN
PRBMDO