Charge transport mechanism analysis of Al/CdS:Sr²⁺/ITO device under dark and light

In this study, we have synthesized CdS:Sr²⁺ by hydrothermal technique. Material property has been studied by X-ray diffraction (XRD), Scanning electron microscope (SEM) and UV-vis absorption spectroscopy. XRD data revealed that there are mixed phases of CdS and SrS in the synthesized sample. The optical band gap of the material was estimated as 3.15 eV from UV-vis data. The synthesized material has been applied in metal-semiconductor device and transport properties have been analyzed by measuring current–voltage characteristics under dark and light conditions at room temperature. Variation in different device parameters like ideality factor, barrier height and series resistance of Al/CdS:Sr²⁺/ITO device were analyzed by using Cheung's function.