A novel low ripple charge pump with a 2X/1.5X booster for PCM
- 1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Description
A low ripple switched capacitor charge pump applicable to phase change memory (PCM) is presented. For high power efficiency, the selected charge pump topology can automatically change the power conversion ratio between 2X/1.5X modes with the input voltage. For a low output ripple, a novel operation mode is used. Compared with the conventional switched capacitor charge pump, the flying capacitor of the proposed charge pump is charged to Vo − Vin during the charge phase (Vo is the prospective output voltage). In the discharge phase, the flying capacitor is placed in series with the Vin to transfer energy to the output, so the output voltage is regulated at Vo. A simulation was implemented for a DC input range of 1.6–2.1 V in on SMIC standard 40 nm CMOS process, the result shows that the new operation mode could regulate the output of about 2.5 V with a load condition from 0 to 10 mA, and the ripple voltage is lower than 4 mV. The maximum power efficiency reaches 91%. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/33/9/095001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 33
- Journal Issue
- 9
- Journal Page Range
- [6 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44043233
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITORS; CONVERSION RATIO; EFFICIENCY; ELECTRIC POTENTIAL; ENERGY TRANSFER; INTEGRATED CIRCUITS; PUMPS; SEMICONDUCTOR MATERIALS; SIMULATION; STANDARDS; TOPOLOGY
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; MATERIALS; MATHEMATICS; MICROELECTRONIC CIRCUITS