Performance enhancement of ZnS:Mn thin film electroluminescent devices by combination of laser and thermal annealing

The combination of laser and thermal annealing was investigated as a post-deposition process for enhancing the luminescent properties of RF-magnetron sputtered ZnS:Mn thin film electroluminescent devices (TFEL). Laser annealing of the uncoated phosphor layer was performed using KrF excimer 248 nm laser pulses of 20 ns under an argon overpressure of 10 bar to limit laser ablation. Single, double and triple irradiation was applied at 1.4 J/cm2. Thermal annealing was performed in vacuum at 500 deg. C and 550 deg. C for 1 h. In this paper we are reporting the brightness-voltage characteristics of devices that have been subjected to all combinations of the two annealing techniques (i.e. laser, thermal, laser + thermal, thermal + laser and finally non-annealed devices). Also, a simple lifetime comparison is made between the best performing device (laser + thermal) and the industrial standard (thermal). The lifetime (time to half brightness) and brightness of the best performing device is found to be more than double compared to the industrial standard.