Published 1997 | Version v1
Journal article Metadata-only

Infrared luminescence in Er and Er+O implanted 6H SiC

Creators

  • 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 2. Johannes Kepler Universitaet, Linz (Austria)
  • 3. Surrey Centre for Research in Ion Beam Applications, University of Surrey, Surrey (United Kingdom)

Description

Photoluminescence in neighbourhood of 1.54 μm due to 4I13/2-4I15/2 intra-4f-shell transmission of Er3+ ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing. (author)

Additional details

Publishing Information

Journal Title
Acta Physica Polonica. Series A
Journal Volume
92
Journal Issue
5
Journal Page Range
p. 879-882
ISSN
0587-4246

Conference

Title
26. International School on Physics of Semiconducting Compounds
Dates
6-13 Jun 1996
Place
Jaszowiec (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
30054032
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; DOPED MATERIALS; EMISSION SPECTRA; ERBIUM ADDITIONS; F STATES; INFRARED RADIATION; ION IMPLANTATION; OXYGEN ADDITIONS; PHOTOLUMINESCENCE; SILICON CARBIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY LEVELS; HEAT TREATMENTS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; RADIATIONS; RARE EARTH ADDITIONS; SILICON COMPOUNDS; SPECTRA

Optional Information

Contract/Grant/Project number
KBN grant no. 1027/T11/96/10
Notes
7 refs, 3 figs