Published May 1977
| Version v1
Journal article
Lattice defects in silicon crystals introduced by ion-implantation
Description
The lattice defects in silicon crystals produced by ion-implantation are strongly dependent both on implantation conditions and on successive heat treatments. Their type, nature, morphology and thermal behavior are described on the basis of the results revealed mainly by transmission electron microscopic observations. Mechanisms of defect formation and growth are also discussed. (auth.)
Additional details
Publishing Information
- Journal Title
- Nippon Kessho Gakkai-Shi
- Journal Volume
- 19
- Journal Issue
- 3
- Series
- Nippon Kessho Gakkai-Shi.
- Journal Page Range
- 187-206
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 9384691
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; BORON; CRYSTAL DEFECTS; CRYSTALS; ELECTRON BEAMS; ELECTRON MICROSCOPY; ION BEAMS; ION IMPLANTATION; KNOCK-ON; PHOSPHORUS; PROTON BEAMS; SILICON
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; LEPTON BEAMS; MICROSCOPY; NONMETALS; NUCLEON BEAMS; PARTICLE BEAMS; SEMIMETALS