Application of a crystal spectrometer to particle induced X-ray emission analyses of GaAs crystals

The application of a wavelength dispersive x-ray spectrometer, instead of the conventional energy dispersive spectrometer, to particle induced x-ray emission analyses of GaAs is reported in this paper. The apparatus and its feasibility are described in detail through measurements of standard samples, Si, Mg, and B in GaAs. The conclusion is that the technique is a good tool for light elements analysis in heavy materials such as GaAs, but proper application of the technique necessitates carefully chosen samples. (author)