Published December 2006 | Version v1
Journal article

Cavity QED with a single QD inside an optical microcavity

  • 1. Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis (France)
  • 2. CEMES 29 Rue Jeanne Marvig, BP 4347, 31055 Toulouse (France)
  • 3. CEA/DRFMC/SP2M, 17, rue des Martyrs, 38054 Grenoble Cedex (France)

Description

To demonstrate strong coupling regime for a single quantum dot inside an optical microcavity, large oscillator strength quantum dots are needed. We show that quantum dots formed by the interface fluctuations of a thin GaAs quantum well are ideal systems for this purpose since they can present an oscillator strength larger than 100. By inserting a GaAs QD inside a state of the art microdisk microcavity, we demonstrate the strong coupling regime with a Rabi splitting of 400 μeV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200671513

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
243
Journal Issue
15
Journal Page Range
p. 3879-3884
ISSN
0370-1972
CODEN
PSSBBD

Conference

Title
4. International conference on semiconductor quantum dots (QD2006)
Dates
1-5 May 2006
Place
Chamonix-Mont Blanc (France)

Optional Information

Notes
With 5 figs., 12 refs.. SICI: 0370-1972(200612)243:15<3879::AID-PSSB200671513>3.0.TX;2-F