Published March 2008 | Version v1
Journal article Metadata-only

Study on magnetic behavior and structure of V-doped AIN films

Creators

  • 1. Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University (Japan)

Description

Magnetic behavior and structure of V-doped AlN (Al1-xVxN) films with various V concentrations (x = 0.03-0.36) were studied. These films exhibit paramagnetic behavior in the temperature range of 10-300 K for all x. These films have only wuerzite-type AlN phase for the range of x below 0.20. For x of 0.36, coexistence of wuerzite-type AlN phase and secondary phase is observed

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/106/1/012005

Additional details

Identifiers

DOI
10.1088/1742-6596/106/1/012005;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
106
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
2. international symposium on atomic technology
Dates
1-2 Oct 2007
Place
Awaji (Japan)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40024576
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM NITRIDES; CONCENTRATION RATIO; CRYSTAL STRUCTURE; DOPED MATERIALS; FILMS; PARAMAGNETISM; PHASE STABILITY; PHASE STUDIES; TEMPERATURE DEPENDENCE; VANADIUM NITRIDES
Descriptors DEC
ALUMINIUM COMPOUNDS; DIMENSIONLESS NUMBERS; MAGNETISM; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; STABILITY; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS