Published September 1, 2010 | Version v1
Journal article

Growth of Cu2ZnSnS4 thin films using sulfurization of stacked metallic films

  • 1. Department of Physics, University of Incheon, 12-1 Songdo-Dong Yeonsu-Gu, Incheon 406-840 (Korea, Republic of)

Description

We fabricated Cu2ZnSnS4 (CZTS) thin films through sulfurization of stacked metallic films. Three types of Cu-Zn-Sn metallic films, i.e., Cu-rich, Cu-correct and Cu-poor precursor films were sputtered onto Mo-coated glass. The sulfurization of stacked Cu-Zn-Sn alloy films was performed at a relatively high temperature, 570 oC, with S-powder evaporation. CZTS films from Cu-rich and Cu-correct precursors showed a Cu2-xS phase on the film surface, while CZTS films from Cu-poor precursors didn't show the Cu2-xS phase. However, all films didn't exhibit any extra secondary phase and exhibited good crystalline textures even with Cu-ratio differences in metallic precursor films. Fabricated CZTS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and Raman scattering measurements. SEM cross-section images of CZTS films showed that Cu-poor CZTS films were grown with more smooth film surface compared with other types of CZTS films.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.03.058

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.03.058;
PII
S0040-6090(10)00367-6;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
518
Journal Issue
22
Journal Page Range
p. 6567-6572
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
2. international conference on microelectronics and plasma technology
Acronym
ICMAP 2009
Dates
22-25 Sep 2009
Place
Busan (Korea, Republic of)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.