Growth of Cu2ZnSnS4 thin films using sulfurization of stacked metallic films
Creators
- 1. Department of Physics, University of Incheon, 12-1 Songdo-Dong Yeonsu-Gu, Incheon 406-840 (Korea, Republic of)
Description
We fabricated Cu2ZnSnS4 (CZTS) thin films through sulfurization of stacked metallic films. Three types of Cu-Zn-Sn metallic films, i.e., Cu-rich, Cu-correct and Cu-poor precursor films were sputtered onto Mo-coated glass. The sulfurization of stacked Cu-Zn-Sn alloy films was performed at a relatively high temperature, 570 oC, with S-powder evaporation. CZTS films from Cu-rich and Cu-correct precursors showed a Cu2-xS phase on the film surface, while CZTS films from Cu-poor precursors didn't show the Cu2-xS phase. However, all films didn't exhibit any extra secondary phase and exhibited good crystalline textures even with Cu-ratio differences in metallic precursor films. Fabricated CZTS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and Raman scattering measurements. SEM cross-section images of CZTS films showed that Cu-poor CZTS films were grown with more smooth film surface compared with other types of CZTS films.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2010.03.058Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2010.03.058;
- PII
- S0040-6090(10)00367-6;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 22
- Journal Page Range
- p. 6567-6572
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 2. international conference on microelectronics and plasma technology
- Acronym
- ICMAP 2009
- Dates
- 22-25 Sep 2009
- Place
- Busan (Korea, Republic of)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060103
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COPPER ALLOYS; COPPER SULFIDES; CROSS SECTIONS; EVAPORATION; GLASS; PRECURSOR; RAMAN EFFECT; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SURFACES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TIN ALLOYS; TIN SULFIDES; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY; ZINC ALLOYS; ZINC SULFIDES
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; DIFFRACTION; ELECTRON MICROSCOPY; FILMS; INORGANIC PHOSPHORS; MICROSCOPY; PHASE TRANSFORMATIONS; PHOSPHORS; SCATTERING; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; TIN COMPOUNDS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.