Formation of the Sb/Ge(100) interface

The electronic properties (work function, surface banding, density of electronic states near Fermi level) of the Ge(100)-(2xl) surface were investigated using electron spectroscopy methods during adsorption of Sb atoms on it. It is shown, that on the beginning stage of Sb atoms adsorption onto Ge(100)-(2xl) surface (θSb ≤ 0.5 ML) and during annealing of Ge(100) surface with several monolayer of Sb on it, the change of band bending with simultaneous change of work function value can be explained by occurrence of the surface intermixing effect between Sb and Ge atoms (build-in of Sb atom into the Ge lattice).