Published 1989 | Version v1
Journal article Metadata-only

Moessbauer study of the electronic and vibrational properties of implanted Te in GaAs and AlxGa1-xAs

Creators

  • 1. Louvain Univ. (Belgium). Inst. for Nuclear- and Radiationphysics
  • 2. Interuniversity Institute of Microelectronics (IMEC), Leuven (Belgium)

Description

A correlation is observed between the lack of electrical activation of Te-implanted GaAs at higher Te-concentrations, and the presence of a quadrupole-split component in the Moessbauer spectrum. This quadrupole multiplet is tentatively associated with the DX-center. It is also observed in Te-doped AlxGa1-xAs. The vibrational properties of the impurity atoms in this site are studied. (author) 18 refs., 2 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
1245-1249
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20062219
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM COMPOUNDS; ARSENIDES; CRYSTAL DOPING; GALLIUM COMPOUNDS; HYPERFINE STRUCTURE; LATTICE VIBRATIONS; MOESSBAUER EFFECT; TELLURIUM
Descriptors DEC
ARSENIC COMPOUNDS; ELEMENTS; SEMIMETALS