Published 2003
| Version v1
Journal article
Radiation hardness of CMS silicon strip sensors
Creators
- 1. Inst. fuer Experimentelle Kernphysik, Univ. Karlsruhe (Germany)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Strahlungshaerte von CMS-Siliziumstreifensensoren
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 38
- Journal Issue
- 2
- Journal Page Range
- p. 19
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- 2003 spring meeting of the German Physical Society, Particle Physics Section, with physics and book exhibition
- Original Conference Title
- Fruehjahrstagung 2003 der Deutschen Physikalischen Gesellschaft (DPG), Fachverband Teilchenphysik, mit Physik- und Buchausstellung
- Dates
- 10-13 Mar 2003
- Place
- Aachen (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 34039320
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CAPACITANCE; DOPED MATERIALS; N-TYPE CONDUCTORS; POSITION SENSITIVE DETECTORS; RADIATION HARDENING; SI SEMICONDUCTOR DETECTORS; SILICON; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELEMENTS; HARDENING; MATERIALS; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS