Published April 1, 1981
| Version v1
Journal article
Measurement of thin aluminium layers on silicon
Creators
- 1. Zentralinstitut fuer Isotopen- und Strahlentechnik, Leipzig (German Democratic Republic)
Description
The thickness of a surface layer with an atomic number adjacent to that of the backing material was determined by particle induced X-ray emission (PIXE) analysis. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods
- Journal Volume
- 180
- Journal Issue
- 2/3
- Series
- Nucl. Instrum. Methods.
- Journal Page Range
- 663-665
- ISSN
- 0029-554X
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 12630045
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ALUMINIUM; LAYERS; SILICON; THICKNESS GAGES; TRACE AMOUNTS; X-RAY EMISSION ANALYSIS; X-RAY SPECTROSCOPY
- Descriptors DEC
- CHEMICAL ANALYSIS; ELEMENTS; MEASURING INSTRUMENTS; METALS; NONDESTRUCTIVE ANALYSIS; SEMIMETALS; SPECTROSCOPY
Optional Information
- Notes
- Letter-to-the-editor.