Published April 12, 2004
| Version v1
Journal article
Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%
Creators
- 1. Research and Development Center, Stanley Electric Co., Ltd, 1-3-1 Eda-Nishi, Yokohama 225-0014 (Japan)
- 2. Materials and Electrical Engineering Departments, University of California at Santa Barbara, Santa Barbara, California 93106 (United States)
Description
We have grown blue (480 nm) nitride semiconductor light emitting diodes (LEDs) by plasma-assisted molecular beam epitaxy (MBE) on GaN templates. Packaged devices exhibited output powers up to 0.87 mW at 20 mA forward current. The corresponding external quantum efficiency was 1.68%. Utilizing a combination of direct current (dc) and pulsed electroluminescence measurements it has been demonstrated that at low (<20 mA) dc conditions the emission from these devices is governed by the combined effects of bandfilling and screening of electrostatic fields. However, at larger currents device heating dominates the emission properties
Additional details
Identifiers
- DOI
- 10.1063/1.1705721;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 84
- Journal Issue
- 15
- Journal Page Range
- p. 2748-2750
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36045086
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIRECT CURRENT; ELECTROLUMINESCENCE; GALLIUM NITRIDES; HEATING; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PLASMA; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; VISIBLE SPECTRA
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CURRENTS; EFFICIENCY; ELECTRIC CURRENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA
Optional Information
- Notes
- (c) 2004 American Institute of Physics.