Published July 2005
| Version v1
Journal article
Effect of temperature on trap charge in (Ba, Sr)TiO3 films on silicon
- 1. Rostovskij Gosudarstvennyj Pedagogicheskij Univ., Rostov-na-Donu (Russian Federation)
Description
Paper presents the results of investigation into the effect of temperature on the memory effect in the metal-ferroelectric film-silicon structures caused by a trap charge in the film. The relaxation rate was found to increase with temperature increase late in the relaxation of the trap charge. One discusses possibility to apply a two-layer model to explain the obtained results
Abstract (Russian)
Приведены результаты исследования влияния температуры на эффект памяти в структурах металл-сегнетоэлектрическая пленка-кремний, обусловленный ловушечным зарядом в пленке. Обнаружено, что на поздних этапах процесса релаксации ловушечного заряда скорость релаксации увеличивалась с ростом температуры. Обсуждена возможность использования двухслойной модели для объяснения полученных результатовAdditional details
Additional titles
- Original title (Russian)
- Влияние температуры на ловушечный заряд в пленках (Ба, Ср)TiO
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 69
- Journal Issue
- 7
- Journal Page Range
- p. 968-970
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- OMA-2004 and ODPO-2004
- Original Conference Title
- 7. Mezhdistsiplinarnyj mezhdunarodnyj simpozium: Fazovye prevrashcheniya v tverdykh rastvorakh i splavakh (OMA-2002) i 7. Mezhdistsiplinarnyj mezhdunarodnyj simpozium: Poryadok, besporyadok i svojstva oksidov (ODPO-2002)
- Dates
- Sep 2004
- Place
- Rostov-na-Donu (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 37104299
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM COMPOUNDS; CAPACITANCE; ELECTRIC CHARGES; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; HETEROJUNCTIONS; HYSTERESIS; RELAXATION TIME; SHAPE MEMORY EFFECT; STRONTIUM TITANATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; FILMS; MATERIALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; STRONTIUM COMPOUNDS; TEMPERATURE RANGE; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 4 refs., 2 figs.