Published 1989
| Version v1
Journal article
Electrical properties of Al-Mn amorphous films formed by ion beam mixing
- 1. Wulhan Univ. (China). Dept. of Physics
Description
Alternating Al-Mn layers are deposited onto the substrates which are placed on a variable temperature target of a 200 keV implanter. The multilayered films are amorphized by a room temperature Ar+ beam irradiation. The electrical resistivity of the samples and their relation to ion beam dose and temperature are measured in situ. TEM observation indicates the presence of the amorphous phase. (author)
Additional details
Publishing Information
- Journal Title
- Vacuum
- Journal Volume
- 39
- Journal Issue
- 2-4
- Series
- Vacuum.
- Journal Page Range
- 251-253
- ISSN
- 0042-207X
- CODEN
- VACUA
Conference
- Title
- international symposium on applications of ion beams produced by small accelerators.
- Acronym
- Ion beam interactions with matter
- Dates
- 20-24 Oct 1987.
- Place
- Jinan (China).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 20053921
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ALLOYS; AMORPHOUS STATE; ARGON IONS; BACKSCATTERING; ELECTRIC CONDUCTIVITY; FILMS; ION IMPLANTATION; ION SOURCES; KEV RANGE 100-1000; LAYERS; MANGANESE ALLOYS; MEDIUM TEMPERATURE; RADIATION DOSES; SUBSTRATES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCO
- Descriptors DEC
- ALLOYS; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ENERGY RANGE; IONS; KEV RANGE; MICROSCOPY; PHYSICAL PROPERTIES; SCATTERING