Published January 2000 | Version v1
Journal article

Preparation and properties of Ni80Fe20/Al2O3/Co magnetic tunnel junctions

  • 1. Nanjing Univ., JS (China). Dept. of Physics
  • 2. Nanjing Univ., JS (China). Center for Materials Analysis

Description

With plasma oxidisation to create an insulating layer of Al2O3, the authors have repeatedly fabricated Ni80Fe20/Al2O3/Co magnetic tunnel junctions which show obvious tunneling magnetoresistance (TMR) effect. At room temperature, the maximum TMR ratio reaches 6.0%. The switch field can be less than 800 A/m with a relative step width of about 2400 A/m. The junction resistance changes from hundreds of ohms to hundreds of kilo-ohms

Additional details

Publishing Information

Journal Title
Wuli
Journal Volume
29
Journal Issue
1
Journal Page Range
p. 5-6
ISSN
0379-4148