Published September 19, 2011
| Version v1
Journal article
Structures and electronics of buried and unburied semiconductor interfaces
Creators
- 1. Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)
Description
The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/24/1/012006Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 24
- Journal Issue
- 1
- Journal Page Range
- [6 p.]
- ISSN
- 1757-899X
Conference
- Title
- Buried interface sciences with X-rays and neutrons 2010
- Dates
- 25-27 Jul 2010
- Place
- Nagoya (Japan)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43022541
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- INTERFACES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SYNTHESIS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EPITAXY; MATERIALS