Published August 25, 2006
| Version v1
Journal article
What Controls Deposition Rate in Electron-Beam Chemical Vapor Deposition?
- 1. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
Description
The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 97
- Journal Issue
- 8
- Journal Page Range
- p. 086101-086101.4
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38023689
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON BEAMS; METHANE; NANOSTRUCTURES; SCALING LAWS; SILICON; SIMULATION; SUBSTRATES
- Descriptors DEC
- ALKANES; BEAMS; CHEMICAL COATING; DEPOSITION; ELEMENTS; HYDROCARBONS; LEPTON BEAMS; NONMETALS; ORGANIC COMPOUNDS; PARTICLE BEAMS; SEMIMETALS; SURFACE COATING
Optional Information
- Notes
- (c) 2006 The American Physical Society