Published December 2013 | Version v1
Journal article

Effect of sheet resistance of Ag-nanowire-based electrodes on cell-performances of ITO-free organic solar cells

  • 1. Professional Graduate School of Flexible and Printable Electronics, Polymer Materials Fusion Research Center, Chonbuk National University, 664-14, Deokjin-dong, Deokjin-gu, Jeonju-si, Jeollabuk-do, 561-756 (Korea, Republic of)
  • 2. School of Materials Science and Chemical Engineering, Kunsan National University, Kunsan, Chonbuk, 753-701 (Korea, Republic of)
  • 3. Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, San 101, Eunha-ri, Bongdong-eup, Wanju-gun, Jeollabuk-do, 565-905 (Korea, Republic of)

Description

This study examined the effects of a sheet resistance of silver nanowire (AgNW)-based electrode on the cell-performances in indium tin oxide (ITO)-free organic solar cells (OSCs) fabricated with AgNWs and highly conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) bilayer electrodes (AgNWs/hcPEDOT). The transmittance and sheet resistance (Rsh) of AgNWs/hcPEDOT electrodes were controlled by varying the spin-coating cycle of AgNW films. Variations in cell-performances including the power conversion efficiency (PCE), the short-circuit current density (Jsc), and the fill factor (FF) that resulted from varying the Rsh of AgNW-based films were systematically studied. With reducing Rsh of transparent electrodes, the FF and the series resistance were continuously improved, but the OSC with the highest FF showed a low Jsc value due to the decrease in transmittance with increasing AgNW density. As a result, an optimum OSC showed a PCE of 2.699%, which is a slightly low PCE value compared with ITO-based OSCs. These results indicate that the cell-performance of OSCs is highly dependent on Rsh of the AgNW-based electrode and that a trade-off between Rsh and transmittance of transparent electrodes should also be considered to perfectly replace the conventional ITO and to achieve higher device-efficiency. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/28/12/125008

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
28
Journal Issue
12
Journal Page Range
[6 p.]
ISSN
0268-1242
CODEN
SSTEET