Published 1975 | Version v1
Journal article Metadata-only

On the deterimination of the photo-ionization energy and the concentration of defects created by nuclear radiation in silicon diodes

Creators

  • 1. Lund Univ. (Sweden)
  • 2. Foersvarets Forskningsanstalt, Stockholm (Sweden)

Description

In the investigations reported optical methods are used to determine the photo-ionization energy and the concentration of defects created by neutron and gamma radiation. The changes in electrical characteristics of the diodes are investigated, and a comparison is made between various types of diodes. (author)

Additional details

Publishing Information

Journal Title
FOA (Foersvarets Forskningsanst.) Rep.
Journal Volume
9
Journal Issue
2
Series
FOA (Foersvarets Forskningsanst.) Rep.
Journal Page Range
1-11

INIS

Country of Publication
Sweden
Country of Input or Organization
Sweden
INIS RN
8311240
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CRYSTAL DEFECTS; GAMMA RADIATION; NEUTRONS; PHOTOIONIZATION; RADIATION DOSES; RADIATION EFFECTS; SILICON DIODES
Descriptors DEC
BARYONS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; HADRONS; IONIZATION; IONIZING RADIATIONS; NUCLEONS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES