Published September 2005
| Version v1
Miscellaneous
Radiation methods in manufacturing techniques of power silicon diodes
Creators
- 1. Inst. fiziki tsverdaga tsela i polupravadnikow, Natsyyanal'naya akadehmiya navuk Belarusi, Minsk (Belarus)
- 2. Navukova-vytvorchae ab'yadnanne 'Intehgral', Minsk (Belarus)
Description
The influence of 4 MeV electron irradiation and isochronal annealing on a lifetime of minority charge carriers and a forward voltage of power diode p-n-structures was investigated. It was shown, that at the electron fluence Φ = 2·1015 cm-2 values of the lifetime τ≅ 60 ns and the forward voltage UF ≤ 1.35 V have been achieved. The method of DLTS has determined the dominating radiation defects (A-centers, complexes CjOj) influencing researched parameters. (authors)
Additional details
Additional titles
- Original title (Russian)
- Радиационные методы в технологии изготовления мощных кремниевых диодов
Publishing Information
- Imprint Place
- Minsk (Belarus)
- Imprint Title
- Proceedings of the 6. international conference 'Interaction of radiation with solids'
- Imprint Pagination
- [442 p.]
- Journal Page Range
- p. 380-382
- Report number
- INIS-BY--069
Conference
- Title
- 6. international conference 'Interaction of radiation with solids'
- Original Conference Title
- 6. mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 28-30 Sep 2005
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 36115356
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CARRIER LIFETIME; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SILICON DIODES
- Descriptors DEC
- BEAMS; ENERGY RANGE; HEAT TREATMENTS; LEPTON BEAMS; LIFETIME; MEV RANGE; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY
Optional Information
- Notes
- 6 refs., 4 figs. Imprint:Materialy 6. mezhdunarodnoj konferentsii 'Vzaimodejstvie izluchenij s tverdym telom'