Published May 2009 | Version v1
Journal article Metadata-only

Effect of neutron radiation on characteristics of AlxGa1-xAs light-emitting diodes

Creators

  • 1. Yinstitut fyiziki napyivprovyidnikyiv, Kyiv (Ukraine)

Description

Light-emitting diodes were exposed to fast neutrons with fluences ranging from 1014 to 5 centre dot 1016n/cm2, and their current-voltage characteristics were measured from 300 K to 80 K. Experimental results have revealed an increase of the positive current through the irradiated diode when it is forward-biased that is connected with a decrease of the majority-carrier concentration and the minority-carrier lifetime. Change of the electric transport is probably due to the creation of traps after neutron irradiation

Additional details

Additional titles

Original title (Ukrainian)
Vpliv nejtronnogo opromyinennya na kharakteristiki svyitlodyiodyiv Al

Publishing Information

Journal Title
Dopovyidyi Natsyional'noyi Akademyiyi Nauk Ukrayini
Journal Issue
no.5
Journal Page Range
p. 87-93
ISSN
1025-6415

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
40091747
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FAST NEUTRONS; LIGHT EMITTING DIODES; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
BARYONS; CURRENTS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; HADRONS; MOBILITY; NEUTRONS; NUCLEONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE