Sensitivity to radiations of advanced electronic components: effect of heavy ion energy

The passage of an ion through an electronic component generates a series of electron-hole pairs. This energy deposit may induce Single-Event Effects (SEE) that can be permanent or transitory. SEE have been considered so far as functions of the only energy deposit through the LET (Linear Energy Transfer) parameter. The miniaturization of electronic components such as transistors makes them more sensitive to radiation and the concept of LET is not sufficient to assess the impact of radiation on electronic components because the path of the ion can be longer than the transistor itself and may impact a neighbouring transistor. Studies have shown that 2 ions with same LET but different initial energies or different directions may have different impacts on advanced electronic components. (A.C.)