Published April 1, 2010 | Version v1
Journal article Metadata-only

Pilot experiment for muonium photo ionization in GaAs

Creators

  • 1. Muon Science Laboratory, IMSS, KEK, Tsukuba, Ibaraki, 305-0801 (Japan)
  • 2. ISIS, Rutherford Appleton Laboratory, Chilton, Oxon OX11 0QX (United Kingdom)
  • 3. Advanced Meson Science Laboratory, RIKEN, Wako, Saitama 351-0191 (Japan)
  • 4. Graduate School of Arts and Science, University of Tokyo, 3-8-1 Komaba, Tokyo 153-8902 (Japan)
  • 5. Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Yamanashi, 400-8511 (Japan)

Description

Direct observation of muonium photo ionization in GaAs was tried for the first time, with wide range wave length from 1325nm to 800nm lasers in n-type GaAs at 15 K. Recently, Lichti et al. determined the energy levels in the band gap of T center muonium (as an acceptor) and BC muonium (as a donor) by reanalysis of the existing data obtained by various μSR techniques for several semiconductors like Si, Ge, GaAs, GaP etc. In these semiconductors, GaAs is the best sample to apply the muonium photo ionization method for the first time, because the energy level of T center muonium is above 0.54 eV from the valence band, therefore the ionization energy for MuT- → MuT0+e- is 0.98eV (corresponding laser wave length is 1260nm), which is within the region of present OPO laser system produced, which was installed RIKEN-RAL

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/225/1/012004

Additional details

Identifiers

DOI
10.1088/1742-6596/225/1/012004;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
225
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
Advanced science research symposium 2009: Positron, muon and other exotic particle beams for materials and atomic/molecular sciences
Acronym
ASR2009
Dates
10-12 Nov 2009
Place
Tokai (Japan)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42047195
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; ENERGY LEVELS; EV RANGE; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; GERMANIUM; JAPANESE ORGANIZATIONS; LASER RADIATION; MUON SPIN RELAXATION; MUONIUM; N-TYPE CONDUCTORS; PHOTOIONIZATION; SILICON; VALENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; GALLIUM COMPOUNDS; IONIZATION; LEPTONS; MATERIALS; METALS; NATIONAL ORGANIZATIONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; RELAXATION; SEMICONDUCTOR MATERIALS; SEMIMETALS