Published August 15, 2010
| Version v1
Journal article
Revealing substructures of H4 and H5 hole traps in p-type InP using Laplace deep-level transient spectroscopy
Creators
- 1. Department of Physics, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus (Syrian Arab Republic)
Description
New substructures of H4 and H5 hole traps have been revealed using Laplace deep-level transient spectroscopy. Our measurements show that the hole traps H4 and H5 can have at least three components for each. Moreover, the activation energies are deduced and the microscopic nature of these substructures is discussed.
Additional details
Identifiers
- DOI
- 10.1063/1.3478744;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 108
- Journal Issue
- 4
- Journal Page Range
- p. 043712-043712.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42069873
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; HOLES; INDIUM PHOSPHIDES; MICROSTRUCTURE; SEMICONDUCTOR MATERIALS; TRAPS
- Descriptors DEC
- ENERGY; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SPECTROSCOPY
Optional Information
- Notes
- (c) 2010 American Institute of Physics