Published March 1989
| Version v1
Journal article
Temperature-dependent photoemission study of the HgTe--CdTe valence-band discontinuity
Creators
- 1. Physics Department, University of Illinois at Chicago, Chicago, Illinois 60680 and Facultes Universitaires Notre-Dame de la Paix, Laboratoire Interdisciplinaire de Spectroscopie Electronique, Namur, Belgium
Description
We have studied the temperature dependence of the CdTe--HgTe valence-band discontinuity with x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The samples have been cooled at 110 K for the XPS experiments and at 50 K for UPS. At room temperature, we measure a valence-band discontinuity of 0.35 +- 0.05 eV, in agreement with previous photoemission results. The valence-band discontinuity is found to change by only a few millivolts between room temperature and 50 K, with an estimated uncertainty of ∼60 meV
Additional details
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology, A
- Journal Volume
- 7
- Journal Issue
- 2
- Series
- J. Vac. Sci. Technol., A.
- Journal Page Range
- 427-430
- ISSN
- 0734-2101
- CODEN
- JVTAD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20032744
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM TELLURIDES; ELECTRONIC STRUCTURE; LOW TEMPERATURE; MEDIUM TEMPERATURE; MERCURY TELLURIDES; PHOTOELECTRON SPECTROSCOPY; SUPERLATTICES; TEMPERATURE DEPENDENCE; VALENCE; X RADIATION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; IONIZING RADIATIONS; MERCURY COMPOUNDS; RADIATIONS; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS