Published May 1, 1988
| Version v1
Journal article
Thermal behavior and range distribution of 209Bi implanted into the Al/V bilayer structure
Creators
- 1. Instituto de Fisica, Universidade Federal do Rio Grande do Sul, 90049 Porto Alegre, RS, Brazil
Description
350-keV 209Bi+ was implanted into an Al (1000 A)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (trIm code). Diffusion coefficients for Bi in both the V substrate of the Al/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 0C. The results show that the Bi ions follow a hindered diffusion at the Al film of the Al/V bilayer and for temperatures higher than 580 0C diffuse regularly in the V bulk
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 63
- Journal Issue
- 9
- Series
- J. Appl. Phys.
- Journal Page Range
- 4431-4434
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19062263
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ALUMINIUM; ATOM TRANSPORT; BISMUTH IONS; BISMUTH 209; DIFFUSION; EXPERIMENTAL DATA; HIGH TEMPERATURE; ION IMPLANTATION; KEV RANGE 100-1000; LAYERS; MEDIUM TEMPERATURE; THICKNESS; THIN FILMS; VANADIUM; VERY HIGH TEMPERATURE
- Descriptors DEC
- ATOMIC IONS; BISMUTH ISOTOPES; CHARGED PARTICLES; DATA; DIMENSIONS; ELEMENTS; ENERGY RANGE; FILMS; HEAVY NUCLEI; INFORMATION; IONS; ISOTOPES; KEV RANGE; METALS; NEUTRAL-PARTICLE TRANSPORT; NUCLEI; NUMERICAL DATA; ODD-EVEN NUCLEI; RADIATION TRANSPORT; STABLE ISOTOPES; TRANSITION ELEMENTS