Published May 1, 1996
| Version v1
Journal article
Stoichiometry reversal and depth-profiling in the growth of thin oxynitride films with N2O on Si(100) surfaces
Creators
- Sutherland, Douglas G.
- Akatsu, H.
- Copel, M.
- Himpsel, Franz J.
- Callcott, Thomas A.
- Carlisle, John A.
- Ederer, David L.
- Jia, Jianjun
- Jimenez Guerrero, Ignacio
- Perera, Rupert C.C.
- Shuh, David K.
- Terminello, Louis J.
- Tong, William M.
- Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Journal of Electron Spectroscopy and Related Phenomena
- Journal Volume
- 80
- Journal Issue
- May
- Journal Page Range
- [10 p.]
- ISSN
- 0368-2048
- CODEN
- JESRAW
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- United States
- INIS RN
- 33068233
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CRYSTAL GROWTH; DEPTH; NITROGEN COMPOUNDS; NITROUS OXIDE; OXYGEN COMPOUNDS; SILICON; SPATIAL DISTRIBUTION; STOICHIOMETRY; SURFACES
- Descriptors DEC
- CHALCOGENIDES; DIMENSIONS; DISTRIBUTION; ELEMENTS; NITROGEN COMPOUNDS; NITROGEN OXIDES; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS
Optional Information
- Contract/Grant/Project number
- AC03-76SF00098
- Notes
- Journal Publication Date: May 1 1996
- Funding organization
- US Department of Energy (United States)
- Secondary number(s)
- LBNL/ALS--449