Published August 1992
| Version v1
Journal article
The investigation of adsorption Sc(3), Ga(3) and In(3) at SiO2 spectrophotometric method
Description
Adsorption of Sc(3), Ga(3) and In(3) on SiO2, depending on pH under static conditions was studied by spectrophotometric method. Increase of adsorption with pH growth was noted for all three elements, as well as specific interaction of aquacomplex of Sc(3)
Additional details
Additional titles
- Original title (Russian)
- Изучение адсорбции Cs(3), Ga(3), In(3) на SiO₂
Publishing Information
- Journal Title
- Vestnik Sankt-Peterburgskogo Universiteta. Seriya 4, Fizika, Khimiya
- Journal Volume
- 3
- Journal Issue
- 18
- Journal Page Range
- p. 91-93.
- ISSN
- 0024-0826
- CODEN
- VSUKEH
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25020952
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ADSORPTION; CHEMISORPTION; INDIUM COMPLEXES; INDIUM COMPOUNDS; PH VALUE; SCANDIUM COMPLEXES; SCANDIUM COMPOUNDS; SILICON OXIDES; SPECTROPHOTOMETRY
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; COMPLEXES; OXIDES; OXYGEN COMPOUNDS; SEPARATION PROCESSES; SILICON COMPOUNDS; SORPTION; TRANSITION ELEMENT COMPLEXES; TRANSITION ELEMENT COMPOUNDS