Vacancy-oxygen complexes produced by 3.5 GeV Xe ion irradiation and their distribution along ion tracks in single-crystal silicon: an infrared study
- 1. Department of Applied Physics, School of Science, Tianjin University, Tianjin (China)
- 2. Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka (Japan)
- 3. Institute of Physical and Chemical Research RIKEN, Wako, Saitama (Japan)
- 4. Japan Atomic Energy Research Institute (JAERI), Tsukuba (Japan)
Description
Irradiation of 3.5 GeV Xe ions was performed at room temperature on Czochralski-grown (CZ) and floating zone Si(100) single crystals with different fluences 1.0x1012 and 1.0x1013 Xe cm-2. All the irradiated samples were investigated by infrared spectroscopy at room temperature. For the first time, vacancy-oxygen (VO) complexes were found experimentally in CZ-Si during high-energy heavy ion irradiation. A depth profile of the IR spectra, the distribution of VO concentration and the interstitial oxygen were successfully obtained along the irradiation depth. The concentration of VO and interstitial oxygen were quantitatively analysed. The effects of electronic excitation and nuclear collision upon the VO production are also discussed in this letter. (author). Letter-to-the-editor
Availability note (English)
Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-6448X) http://www.iop.org/Additional details
Identifiers
- URL
- http://www.iop.org/;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 14
- Journal Issue
- 3
- Journal Page Range
- p. L57-L62
- ISSN
- 0953-8984
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33028051
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- GEV RANGE; INFRARED SPECTRA; INTERSTITIALS; ION BEAMS; IRRADIATION; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SILICON; VACANCIES; XENON IONS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; ENERGY RANGE; IONS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; SPECTRA
Optional Information
- Notes
- An erratum for this article has been published in 2002 J. Phys.: Condens. Matter 14 2715