Improved Performance of a Wavelength-Tunable Arrayed Waveguide Grating in Silicon on Insulator*
- 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
- 2. Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing 100083 (China)
Description
The improved performance of a wavelength-tunable arrayed waveguide grating (AWG) is demonstrated, including the crosstalk, insertion loss and the wavelength tuning efficiency. A reduced impact of the fabrication process on the AWG is achieved by the design of bi-level tapers. The wavelength tuning of the AWG is achieved according to the thermo-optic effect of silicon, and uniform heating of the silicon waveguide layer is achieved by optimizing the heater design. The fabricated AWG shows a minimum crosstalk of 16 dB, a maximum insertion loss of 3.91 dB and a wavelength tuning efficiency of 8.92 nm/W, exhibiting a ∼8 dB improvement of crosstalk, ∼2.1 dB improvement of insertion loss and ∼5 nm/W improvement of wavelength tuning efficiency, compared to our previous reported results. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/36/5/054204Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 36
- Journal Issue
- 5
- Journal Page Range
- [4 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52041291
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; EFFICIENCY; LAYERS; OPTICS; SILICON; WAVEGUIDES; WAVELENGTHS
- Descriptors DEC
- ELEMENTS; EVALUATION; SEMIMETALS