Effects on N-implantation into AlNx thin films

The 750 A AlNx films were deposited on Si (111), glassy carbon and commercial glass by an activated reactive evaporation (ARE) method in a nitrogen atmosphere. The 80 keV N+-implantation was carried out near room temperature with doses ranging from 5 x 1016 to 5 x 1017 N+/cm2 at 1 x 10-6 torr. The composition of the film before N+-implantation was revealed by the Rutherford backscattering (RBS). The results of an Xray Diffraction (XRD) and a measurement of optical transmittance show the changes on crystallinity and optical trasmittance of the AlNx (x<1) films due to N+-implantation, depending on doses. It is concluded that N-ion implantation in AlNx films results in the formation of c-axis oriented AlN films. (author)