Published 1988 | Version v1
Book Metadata-only

Amorphization and recrystallization in MeV ion implanted InP crystals

Creators

  • 1. Materials Research Group, California Institute of Technology, Pasadena, CA (USA)

Description

A comprehensive study of MeV-15N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
0-931837-68-5
Imprint Title
Fundamentals of beam-solid interactions and transient thermal processing
Imprint Pagination
763 p.
Series
Materials Research Society symposium proceedings. Volume 100.
Journal Page Range
p. 105-112.

Conference

Title
Symposium on fundamentals of beam-solid interactions and transient thermal processing.
Dates
30 Nov - 3 Dec 1987.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21018504
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; ANALYTICAL SOLUTION; ANNEALING; CRYSTAL GROWTH; CRYSTALLIZATION; INDIUM PHOSPHIDES; ION IMPLANTATION; LATTICE PARAMETERS; NITROGEN 15; SEMICONDUCTOR MATERIALS
Descriptors DEC
HEAT TREATMENTS; INDIUM COMPOUNDS; ISOTOPES; LIGHT NUCLEI; MATERIALS; NITROGEN ISOTOPES; NUCLEI; ODD-EVEN NUCLEI; PHASE TRANSFORMATIONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; STABLE ISOTOPES

Optional Information

Secondary number(s)
CONF-8711126--.