Study and investigation of gain in semiconductor Al0.2 Ga0.8 As/Ga As quantum well laser

The aim of this work is to study the basic principles, which govern the operations of quantum well lasers. One of the keys for understanding these, underlying principles requires a basic comprehension of the single quantum well and its characteristics like the gain. Optical gain characteristics of quantum well lasers are investigated in a broad range in a weakly quantized model with k selection rule. This model, based on Kane's two band model, solves to find the constant energy surfaces. Here, the investigated system was GaAs/Al0.2 Ga0.8 As as quantum well structures at 300 K. In this work, we investigate theoretically a number of important issues related to the performance of quantum well semiconductor lasers, which include derivation of gain in quantum well lasers structures. The maximum gain as a function of emission photon energy and modal gain with confinement factor in cavity lasers are calculated and drawn