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Published 2023 | Version v1
Journal article

Secret key rate bounds for quantum key distribution with faulty active phase randomization

  • 1. atlanTTic Research Center, University of Vigo, E-36310, Vigo (Spain)
  • 2. Escuela de Ingeniería de Telecomunicación, Department of Signal Theory and Communications, University of Vigo, E-36310, Vigo (Spain)
  • 3. Vigo Quantum Communication Center, University of Vigo, E-36310, Vigo (Spain)
  • 4. Faculty of Engineering, University of Toyama, Gofuku 3190, 930-8555, Toyama (Japan)

Description

Decoy-state quantum key distribution (QKD) is undoubtedly the most efficient solution to handle multi-photon signals emitted by laser sources, and provides the same secret key rate scaling as ideal single-photon sources. It requires, however, that the phase of each emitted pulse is uniformly random. This might be difficult to guarantee in practice, due to inevitable device imperfections and/or the use of an external phase modulator for phase randomization in an active setup, which limits the possible selected phases to a finite set. Here, we investigate the security of decoy-state QKD when the phase is actively randomized by faulty devices, and show that this technique is quite robust to deviations from the ideal uniformly random scenario. For this, we combine a novel parameter estimation technique based on semi-definite programming, with the use of basis mismatched events, to tightly estimate the parameters that determine the achievable secret key rate. In doing so, we demonstrate that our analysis can significantly outperform previous results that address more restricted scenarios.

Availability note (English)

Available from: http://dx.doi.org/10.1140/epjqt/s40507-023-00210-0

Additional details

Publishing Information

Journal Title
EPJ Quantum Technology
Journal Volume
10
Journal Issue
1
Journal Page Range
vp.
ISSN
2196-0763

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
55016883
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
DEFECTS; DISTRIBUTION; MULTI-PHOTON PROCESSES; RANDOMNESS

Optional Information

Notes
AID: 53