Published November 2015 | Version v1
Journal article

Fluorophore-based sensor for oxygen radicals in processing plasmas

  • 1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  • 2. Department of Biochemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  • 3. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

Description

A high concentration of radicals is present in many processing plasmas, which affects the processing conditions and the properties of materials exposed to the plasma. Determining the types and concentrations of free radicals present in the plasma is critical in order to determine their effects on the materials being processed. Current methods for detecting free radicals in a plasma require multiple expensive and bulky instruments, complex setups, and often, modifications to the plasma reactor. This work presents a simple technique that detects reactive-oxygen radicals incident on a surface from a plasma. The measurements are made using a fluorophore dye that is commonly used in biological and cellular systems for assay labeling in liquids. Using fluorometric analysis, it was found that the fluorophore reacts with oxygen radicals incident from the plasma, which is indicated by degradation of its fluorescence. As plasma power was increased, the quenching of the fluorescence significantly increased. Both immobilized and nonimmobilized fluorophore dyes were used and the results indicate that both states function effectively under vacuum conditions. The reaction mechanism is very similar to that of the liquid dye

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Journal Volume
33
Journal Issue
6
Journal Page Range
p. 061305-061305.5
ISSN
0734-2101
CODEN
JVTAD6

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47049560
Subject category
S42: ENGINEERING;
Descriptors DEI
ABUNDANCE; FLUORESCENCE; OXYGEN; PLASMA; QUENCHING; RADICALS; REACTION KINETICS; SENSORS; SURFACES
Descriptors DEC
ELEMENTS; EMISSION; KINETICS; LUMINESCENCE; NONMETALS; PHOTON EMISSION

Optional Information

Notes
(c) 2015 American Vacuum Society