Surface-phase transitions in the charge-density-wave systems 1T-TaSe2 and 1T-TiSe2
Description
The goal of the present work is to investigate the electronic structure of the surfaces of the transition-metal dichalcogenides 1T-TaSe2 and 1T-TiSe2. In particular the modification of the electronic structure by enhanced interactions at the surface is studied. 1T-TaSe2 shows a pronounced metal-to-insulator transition, which may be related to Mott physics and is not observable in bulk sensitive transport measurements. The first part of this work investigates the origin and the spatial extend of this transition. Time- and angle-resolved extreme ultraviolet photoelectron spectroscopy is used to determine the momentum-dependent electronic structure dynamics in the layered material 1T-TaSe2. Extracted spectroscopic order parameters display a global two-time-scale dynamics indicating a quasi-instantaneous loss of the electronic orders and a subsequent coherent suppression of the lattice distortion on a time scale related to the frequency of the charge-density-wave amplitude mode. The fast reaction of the system reveals electronic interplay as the driving force to this phase transition. Moreover, the depth dependency of the charge-density wave in 1T-TaSe2 at low temperatures is studied by hard X-ray photoelectron spectroscopy. The additional charge- density-wave-induced splitting of the Ta-4f-core levels, which serves as an excellent order parameter for the strength of the charge-density wave, is investigated. The findings corroborate the idea of a surface confined metal-to-insulator transition triggered by an enhancement of the charge-density wave at the surface. The second part of the present work focuses on the modification of the electronic structure at the surface of 1T-TiSe2 enforced by electron doping. Angle-resolved photoelectron spectroscopy is used to investigate the influence on the charge-density wave in this material in detail. At high doping levels the charge-density wave vanishes and the complete electronically decoupling of the uppermost layer is observed.
Availability note (English)
Available from: http://macau.uni-kiel.de/servlets/MCRFileNodeServlet/dissertation_derivate_00006368/DissertationSohrt.pdf?hostsAdditional details
Additional titles
- Original title (German)
- Oberflaechen-Phasenuebergaenge in den Ladungsdichtewelle-Systemen 1T-TaSe2 und 1T-TiSe2
Identifiers
Publishing Information
- Imprint Pagination
- 157 p.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 47080570
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Thesis, Non-conventional Literature
- Descriptors DEI
- BAND THEORY; CHARGE DENSITY; ELECTRIC CONDUCTIVITY; ELECTRICAL INSULATORS; ELECTRONIC STRUCTURE; ENERGY LEVELS; EXTREME ULTRAVIOLET RADIATION; MOTT SCATTERING; ORDER PARAMETERS; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; SPATIAL RESOLUTION; SURFACE PROPERTIES; THALLIUM SELENIDES; TIME RESOLUTION
- Descriptors DEC
- CHALCOGENIDES; DIMENSIONLESS NUMBERS; ELASTIC SCATTERING; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; EQUIPMENT; PHYSICAL PROPERTIES; RADIATIONS; RESOLUTION; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SPECTROSCOPY; THALLIUM COMPOUNDS; TIMING PROPERTIES; ULTRAVIOLET RADIATION